Title:
半導体装置
Document Type and Number:
Japanese Patent JP6974401
Kind Code:
B2
Abstract:
Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.
Inventors:
Shunpei Yamazaki
Masahiko Hayakawa
Shinpei Matsuda
Daisuke Matsubayashi
Masahiko Hayakawa
Shinpei Matsuda
Daisuke Matsubayashi
Application Number:
JP2019154374A
Publication Date:
December 01, 2021
Filing Date:
August 27, 2019
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G02F1/1368
Domestic Patent References:
| JP2012256825A | ||||
| JP2010020322A | ||||
| JP2012084858A | ||||
| JP2011071476A | ||||
| JP2012151469A | ||||
| JP2011181913A | ||||
| JP2010123938A |
Foreign References:
| US20090206332 |
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