Title:
半導体装置
Document Type and Number:
Japanese Patent JP6984732
Kind Code:
B2
Abstract:
A semiconductor device includes pads arrayed between a region where a transistor portion or a diode portion is disposed and a first end side on an upper surface of a semiconductor substrate, and a gate runner portion that transfers a gate voltage to the transistor portion. The gate runner portion has a first gate runner disposed passing between the first end side of the semiconductor substrate and at least one of the pads in the top view, and a second gate runner disposed passing between at least one of the pads and the transistor portion in the top view. The transistor portion is also disposed in the inter-pad regions, the gate trench portion disposed in the inter-pad regions is connected to the first gate runner, and the gate trench portion arranged so as to face the second gate runner is connected to the second gate runner.
Inventors:
Imagawa Tetsutaro
Application Number:
JP2020505641A
Publication Date:
December 22, 2021
Filing Date:
January 25, 2019
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/336; H01L21/822; H01L21/8234; H01L21/8249; H01L27/04; H01L27/06; H01L27/088; H01L29/06; H01L29/12; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JP2015233133A | ||||
| JP2009038318A |
Foreign References:
| WO2018030440A1 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation