PURPOSE: To form a semiconductor device of a structure in which an interlayer film under a bump is hard to damage by a method wherein the interlayer film including a coating flattened film is formed only in a region other than a lower layer of an input/output pad part formed on the surface of the semiconductor device.

CONSTITUTION: A first-layer wiring part is formed of aluminum on a semiconductor substrate 3. Then, a first interlayer film 4 used to insulate the first-layer wiring part from an upper-layer wiring part is formed. Then, a through hole is made in the first interlayer film 4; a second-layer wiring part is formed on it and is connected to the first-layer wiring pert. Then, a second interlayer film 5 used to insulate the second-layer wiring part from the upper-layer wiring part is formed. This second interlayer film is formed by using a coating flattened film, e.g. an organic resin film of a compound or the like of silicon and a polyimide. After that, a heat treatment is executed; the coating flattened film is baked and solidified; a through hole is made in the second interlayer film 5. During this process, the coating flattened film 5 in parts in which bumps are formed is etched and removed simultaneously; recessed parts 6 are formed so as to expose the first interlayer film 4. Then, a third-layer wiring part and the bums 2 are formed.