PURPOSE: To secure electrical connection between a substrate and a wiring part or between wiring parts through an opening provided in an interlayer insulating film by constituting the whole or a part of the interlayer insulating film out of alkylsilicon polymers, wherein the ratio of the number of silicon atoms to the number of alkyl groups is in a specified range, with siloxane coupling as base substance.
CONSTITUTION: The whole or an part of an interlayer insulating film is constitut ed of alkylsilicon polymers, wherein the ratio of the number of silicon atoms to the number of alkyl groups is in the range of 0.2-0.7, with siloxane coupling as base substance. The first interlayer insulating film 21 made of SiO2 is formed uniformly by CVD method on the silicon substrate 1 face where semiconductor elements groups are formed, and besides the first wiring part 31 made of alumi num is formed in pattern shape on the face. Next, S.O.G. material in specific constitution is applied on this face by rotation using a spin coater. Next, the applied S.O.G. material is treated by baking into methylsilicon polymers, and the second interlayer insulating film 22 in a plane shape is formed.
IWAMORI TOSHIMICHI
TEZUKA HIROAKI
