PURPOSE: To obtain a semiconductor device having hillock-shaped solder bump structure preventing a short circuit between external input/output electrodes and the breaking of the electrodes and an insulating film.

CONSTITUTION: The opening sections 7 of insulating films 4, 5 formed on an electrode pad section 3 formed on the substrate 2 of a semiconductor device 1 are composed of a plurality of opening sections having the shape of a line and point symmetry, and hillock-shaped solder bumps 8 are formed in the opening sections. Accordingly, the shapes of the hillock-shaped solder bumps are also formed in the line and point symmetry, and the height of solder on each side of the hillock-shaped solder bumps is equalized, thus allowing suitable connection.