PURPOSE: To transmit a signal without attenuation by a method wherein the same signal is given to the electrode to be connected to a reverse conductive type semiconductor layer and the electrode to be connected to one-conductivity type semiconductor region.
CONSTITUTION: CM is the M0S capacitor part which becomes the main capacitor part in the MOS structure consisting of a metal-side electrode 10, an insulating layer 7 and a p-type diffusion layer 6. CS1 is a parasitic capacitor part consisting of a p-n junction capacitor which is generated between the p-type diffusion layer 6 and an n-type epitaxial layer 3, and CS2 is a parasitic capacitor part consisting of a p-n junction capacitor of the conductivity type opposite to that of the CS1 generating between an n+ type buried diffusion layer 2 and a p-type substrate l. When the same signal is given to A and B terminals, no current is allowed to flow on the capacitor CS1, because the voltage added to both ends of the capacitor CS1 is not changed. As a result, the signal given to the B terminal is transmitted to the C terminal. Accordingly, the C terminal is not subjected to the parasitic effect of parasitic capacitor against the substrate.
FUNAKI TETSUJI
TANAKA HIROKAZU
