PURPOSE: To allow a power source noise Vn which is mixed in through a substrate to be shielded by a region with opposite conductivity type grounded region and prevent its noise from reaching a signal line by earthing one region of one electrode out of two electrodes as well as a region with reverse conductivity type and by using the other electrode as the signal conductor.
CONSTITUTION: The title device has a semiconductor substrate 1 of one conductivity, a region 19 with opposite conductivity type which is formed on the substrate 1 and grounded, a thick oxide film 2 which is formed on the region 19, a first electrode 3 formed on the film 2, a thin oxide film 4 which is formed on the electrode 3, a second electrode 5 which is formed on the film 4, and the electrode 5 is grounded and the other one 3 is used as a signal conductor. A power source noise Vn is attenuated by the capacity value C3 of junction capacitor 20 and the resistance value R of resistance 21 by mounting P well 18 between the thick oxide film 2 and the substrate and they by earthing its well in this way. Then, mixing to the signal conductor of the power source noise is drastically limited.
| JP2008047807 | SEMICONDUCTOR DEVICE |
| JP6783708 | Semiconductor device |
| JPH0393265 | SEMICONDUCTOR INTEGRATED CIRCUIT |
YAGISHITA CHO
KATSUMATA ISAMU
| JPS6329962A | 1988-02-08 | |||
| JPS6146057A | 1986-03-06 |
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