Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5154140
Kind Code:
B2
Abstract:
Disclosed is a semiconductor device including: a substrate; a wiring layer formed on the substrate and made of copper or a copper alloy; a copper diffusion barrier film formed on the wiring layer and made of an amorphous carbon film formed by CVD using a processing gas containing a hydrocarbon gas; and a low-k insulating film formed on the copper diffusion barrier film.
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Inventors:
Taku Ishikawa
Application Number:
JP2007130142A
Publication Date:
February 27, 2013
Filing Date:
May 16, 2007
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/768; H01L21/314; H01L21/3205; H01L23/522; H01L23/532
Domestic Patent References:
| JP2005050859A | ||||
| JP6140401A | ||||
| JP2004193544A | ||||
| JP2006294941A | ||||
| JP2001319928A | ||||
| JP2006324584A | ||||
| JP2006253504A | ||||
| JP9321045A | ||||
| JP2002194547A | ||||
| JP2001062605A | ||||
| JP8064591A | ||||
| JP2003505882A |
Foreign References:
| WO2005087974A1 |
Attorney, Agent or Firm:
Hiroshi Takayama