Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5862660
Kind Code:
B2
Abstract:
An anode region 106 is formed on a bottom portion of a trench 105 in which a gate electrode 108 is formed or in a drift region 102 immediately under the trench 105. A contact hole 110 is formed in the trench 105 at a depth reaching the anode region 106. A source electrode 112 is embedded in the contact hole 110 while interposing an inner wall insulating film 111 therebetween. The anode region 106 and the source electrode 112 are electrically connected to each other in a state of being insulated from the gate electrode 108 by the inner wall insulating film 111.
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Inventors:
Shigeharu Yamagami
Tetsuya Hayashi
Taku Shimomura
Tetsuya Hayashi
Taku Shimomura
Application Number:
JP2013510915A
Publication Date:
February 16, 2016
Filing Date:
February 24, 2012
Export Citation:
Assignee:
Nissan Motor Co., Ltd
International Classes:
H01L29/78; H01L27/04; H01L29/12
Domestic Patent References:
| JP2011199041A | 2011-10-06 | |||
| JP2012227324A | 2012-11-15 | |||
| JP2010109221A | 2010-05-13 | |||
| JP2005501408A | 2005-01-13 | |||
| JP2011199041A | 2011-10-06 | |||
| JP2012227324A | 2012-11-15 | |||
| JPH057002A | 1993-01-14 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Iwa Saki Kokuni
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu