Semiconductor devices and their manufacturing methods - Semiconductor Energy Laboratory Co., Ltd.

Title:

Semiconductor devices and their manufacturing methods

Document Type and Number:

Japanese Patent JP6305580

Kind Code:

B2

Abstract:

An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.

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Inventors:

Shunpei Yamazaki
Tatsuya Honda

Application Number:

JP2017001507A

Publication Date:

April 04, 2018

Filing Date:

January 09, 2017

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