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Title:
SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME
Document Type and Number:
Japanese Patent JP2012257214
Kind Code:
A
Abstract:

To provide a semiconductor device that reduces power consumption and prevents an increased circuit area by constituting a standby circuit with fewer elements.

The standby circuit in the semiconductor device comprises only one transistor, and switching a voltage supplied to the transistor controls an output current of the semiconductor device. As a result, the output current of the semiconductor device in a standby state can be substantially zero to reduce power consumption. The use of an oxide semiconductor for a semiconductor layer of the transistor can minimize a leakage current.


Inventors:
HIROSE ATSUSHI
Application Number:
JP2012108983A
Publication Date:
December 27, 2012
Filing Date:
May 11, 2012
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H03F3/08; H01L21/822; H01L27/04; H01L29/786; H03F1/02; H03F3/343
Domestic Patent References:
JPH01289381A1989-11-21
JP2009260503A2009-11-05
JP2009047688A2009-03-05