To enable further refinement of element structure beyond the refinement limit of the conventional method and thereby realize a higher performance of a semiconductor integrated circuit (LSI).

The semiconductor element and the semiconductor integrated circuit using the same which has a structure comprising lower-concentration impurity regions than the impurity concentrations of the source and the drain. These regions are formed between the source and a channel beneath gate and between the drain and the channel in an asymmetric shape with respect to the center line along which the gate extends.