SEMICONDUCTOR ELEMENT USING POLYCRYSTALLINE THIN FILM

Title:

SEMICONDUCTOR ELEMENT USING POLYCRYSTALLINE THIN FILM

Document Type and Number:

Japanese Patent JP2003007721

Kind Code:

A

Abstract:

To reduce the leakage current of a semiconductor element using a polycrystalline thin film.

The ratio of the center line mean roughness of an insulation film surface formed on a silicon film, to the thickness of a polycrystalline thin film containing silicon as a main component, is set 0.5 or less.

Inventors:

MINO YOSHIKO
YAMAMOTO SHINICHI
NISHITANI TERU

Application Number:

JP2001187709A

Publication Date:

January 10, 2003

Filing Date:

June 21, 2001

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

G02F1/1368; G09F9/30; G09F9/35; H01L21/20; H01L21/336; H01L27/32; H01L29/786; H01L51/50; H05B33/10; H05B33/14; H05B44/00; (IPC1-7): H01L21/336; G02F1/1368; G09F9/30; G09F9/35; H01L21/20; H01L29/786; H05B33/08; H05B33/10; H05B33/14

Attorney, Agent or Firm:

Fumio Iwahashi (2 others)

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