Title:
SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3505405
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor element without degradation in crystalline, provided with an element configuration layer of good crystalline.
SOLUTION: In a semiconductor element where an element configuration layer 20 of a nitride semiconductor is provided on a substrate 1, a first buffer layer 2A formed at a temperature lower than that for single crystal growth and a second buffer layer 2B formed at the single crystal growth temperature are provided in this order on the substrate 1, with the element configuration layer 20 formed on the second buffer layer 2A.
Inventors:
Masayuki Hata
Tatsuya Kunisato
Koji Tominaga
Yasuhiko Matsushita
Tatsuya Kunisato
Koji Tominaga
Yasuhiko Matsushita
Application Number:
JP30099698A
Publication Date:
March 08, 2004
Filing Date:
October 22, 1998
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
Tottori Sanyo Electric Co.,Ltd.
Tottori Sanyo Electric Co.,Ltd.
International Classes:
C23C16/34; H01L21/20; H01L21/205; H01L31/10; H01L33/06; H01L33/12; H01L33/32; H01S5/00; H01S5/02; H01S5/323; H01S5/343; (IPC1-7): H01L33/00; C23C16/34; H01L21/205; H01L31/10
Domestic Patent References:
| JP11298039A | ||||
| JP832116A | ||||
| JP983016A | ||||
| JP2303068A | ||||
| JP9252163A | ||||
| JP9293897A |
Attorney, Agent or Firm:
Masamasa Shibano