Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3480297
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a GaN semiconductor layer on a silicon board readily, by constituting a buffer layer of a first Ti buffer layer formed on a board and a second Zr buffer layer formed on the second buffer layer.
SOLUTION: A board 21, a Ti lump and a Zr lump are mounted inside a chamber of an EB deposition device. A chamber is evacuated by using a vacuum device. Thereafter, nitrogen gas is fed and filled in a chamber. A chamber is evacuated again and the board 21 is kept at about 150°C by using a lamp heater. Then, Ti is deposited in a (111) surface of the board 21 by an electron beam method and a first buffer layer 22a is obtained. Successively, Zr is deposited on the first buffer layer 22a by an electron beam method keeping vacuum state and a second buffer layer 22b is obtained.
Inventors:
Toshiaki Chiyo
Naoki Shibata
Jun Ito
Noji Shizuyo
Naoki Shibata
Jun Ito
Noji Shizuyo
Application Number:
JP3198298A
Publication Date:
December 15, 2003
Filing Date:
January 28, 1998
Export Citation:
Assignee:
Toyoda Gosei Co., Ltd.
International Classes:
C30B23/08; C30B29/40; H01L21/20; H01L21/205; H01L33/12; H01L33/16; H01L33/32; H01L33/34; H01S5/323; (IPC1-7): H01L21/205; C30B23/08; C30B29/40; H01L21/20; H01L33/00; H01S5/323
Domestic Patent References:
| JP11260835A | ||||
| JP9162125A | ||||
| JP8316145A | ||||
| JP992882A | ||||
| JP8310900A |
Attorney, Agent or Firm:
Tomiga Konishi