Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022101951
Kind Code:
A
Abstract:
To realize overcurrent protection with a simpler configuration.SOLUTION: For example, a semiconductor device includes: a split-gate power transistor configured to have a plurality of channel regions that are controlled individually in accordance with a plurality of gate control signals; a gate control circuit configured to generate the plurality of gate control signals; and an overcurrent protection circuit configured to turn off at least one of the plurality of channel regions when an output current that passes through the power transistor exceeds a threshold voltage.SELECTED DRAWING: Figure 9
Inventors:
TAKAHASHI NAOKI
Application Number:
JP2020216375A
Publication Date:
July 07, 2022
Filing Date:
December 25, 2020
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H02M1/08; H01L21/822; H01L29/78; H03K17/08; H03K17/687
Attorney, Agent or Firm:
Patent Business Corporation Sano Patent Office