Title:
SEMICONDUCTOR FILM FORMING METHOD
Document Type and Number:
Japanese Patent JP2011108819
Kind Code:
A
Abstract:
To provide a semiconductor film forming method for forming a semiconductor film with controlled conductivity on a substrate with low heat resistance.
The semiconductor film forming method includes a particle applying step of applying silicon particles 13 with dopant doped thereon to a substrate 10 being a flexible substrate formed with general-purpose engineering plastics as a material and a film forming step of forming a silicon film 14 on the substrate 10 with the silicon particles 13 applied thereon by plasma CVD in the atmosphere of mixed gas containing hydrogen gas.
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Inventors:
TAYA MASAKI
DEO SHINICHI
TOKUNAGA TAKASHI
DEO SHINICHI
TOKUNAGA TAKASHI
Application Number:
JP2009261887A
Publication Date:
June 02, 2011
Filing Date:
November 17, 2009
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/205; C23C16/24; H01L31/04
Attorney, Agent or Firm:
Hiroaki Sakai
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