Title:
SEMICONDUCTOR IC DEVICE
Document Type and Number:
Japanese Patent JPS6072243
Kind Code:
A
Abstract:
PURPOSE:To obtain the titled device of high integration and high performance by a method wherein the side surface of the active region of an Si substrate is covered with an insulation film or non single crystal Si, and a region the active region of which is of SiO2 over the whole area in the lower part and a region part of which is the Si substrate are provided. CONSTITUTION:An etching groove 12 is formed in the thremal oxide film 15 on the (111) plane of the N type Si substrate 11, and an Si3N4 16 is formed on the groove wall via film 15. The roots 19 and 20 of projections 13 and 14 are made narrow by isotropic chemical etching of the substrate. The part 19 is put in the state of an SiO2 21 by heat oxidation, and a narrow part 22 is left in the part 20. They are covered with a poly Si 23, a resist being applied, and a resist 24 being then left by isotropic removal of the resist. Thereafter, a flat surface is formed by removal of the poly Si 23, and single crystals 14 and 13 are provided with a depletion type FETA40 and an enhancement type FETB41, respectively. The FET's having independent values of Vth can be obtained by separate control of the substrate bias with each device 40 and 41. Accordingly, the titled device of high integration having the structure of insulation and isolation whereby the power source can be selectively taken from the lower part of the substrate can be obtained.
Inventors:
TAKEMOTO TOYOKI
KAWAKITA KENJI
SAKAI HIROYUKI
KAWAKITA KENJI
SAKAI HIROYUKI
Application Number:
JP18102783A
Publication Date:
April 24, 1985
Filing Date:
September 28, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/74; H01L21/762; H01L27/00; H01L21/763; H01L21/8222; H01L21/8236; H01L27/06; H01L27/088; (IPC1-7): H01L27/00; H01L27/08
Domestic Patent References:
| JPS5612747A | 1981-02-07 | |||
| JP57413438A | ||||
| JPS547468A | 1979-01-20 | |||
| JPS57154856A | 1982-09-24 | |||
| JPS57154855A | 1982-09-24 | |||
| JPS5612749A | 1981-02-07 | |||
| JPS5245275A | 1977-04-09 | |||
| JPS5864045A | 1983-04-16 | |||
| JPS5662333A | 1981-05-28 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)