PURPOSE: To improve the withstand voltage of a capacitor provided with a capacitor insulating film composed of a ceramic thin film having a perovskite structure by reducing the leakage current of the capacitor.
CONSTITUTION: A ferroelectric capacitor composed of a lower electrode 13A, a ceramic capacitor film 14A composed of a ferroelectric substance, and an upper electrode 15A is formed on a base insulating film 12 formed on a semiconductor substrate 11. On the substrate 11, in addition, an interlayer insulating film 16 is formed so as to cover the capacitor and electrode wiring 17 is formed on the film 16. The relation between the surface length L of a ceramic capacitor film 14A formed between the intersection of the side face of the upper electrode 15A with the upper surface of the ceramic capacitor film 14A and that of the side face of the film 14A with the upper surface of the lower electrode 13A and the thickness D of the film 14A is set in a relation, L≥2D.
UEDA DAISUKE