Title:
SEMICONDUCTOR MEMORY DEVICE AND ITS PREPARATION
Document Type and Number:
Japanese Patent JPH08340092
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor memory device provided with a ferroelectric memory capacitor having an integration density comparable roughly with that of a DRAM circuit, which has been used hitherto with considerable high reliability and quality. SOLUTION: A memory capacitor, which is associated with a selector transistor 3 and has a ferroelectric dielectric material 13, is arranged in a state so that the capacitor projects towards a plane 21, which is the surface of a substrate, and the memory capacitor having the ferroelectric dielectric material 13 is arranged on the inside of a trench, so as to reach up to a second electrode terminal 6 of the transistor 3.
Inventors:
GEORUKU TENPERU
Application Number:
JP12411196A
Publication Date:
December 24, 1996
Filing Date:
April 22, 1996
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L21/02; H01L21/822; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/04; H01L27/108; H01L27/115; (IPC1-7): H01L27/108; H01L21/8242; H01L27/04; H01L21/822; H01L27/10
Attorney, Agent or Firm:
Tomimura Kiyoshi
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