To output a stable oscillation frequency without being influenced by dispersion in process variation or changes in external environments.

The semiconductor integrated circuit device 30 is provided with a CR oscillation circuit 1 and a reference voltage generation circuit 2. The CR oscillation circuit 1 is provided with a comparator COMP1, a capacitor C1, an inverter INV1, an inverter INV2 and a resistor R1. The capacitor C1 and the resistor R1 function as a CR oscillation means. The reference voltage generation circuit 2 generates stable reference voltage Vref1 with small voltage variation and small temperature change and reference voltage Vref2 higher than the reference voltage Vref1, outputs the reference voltage Vref2 to an input port (+) of the comparator COMP1 when an oscillation output signal of the CR oscillation circuit 1 is in a high level and outputs the reference voltage Vref1 to the input port (+) of the comparator COMP1 when the oscillation output signal is in a low level.