Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JP3498251
Kind Code:
B2
Abstract:
PURPOSE: To enhance the accuracy and reproducibility of a temperature detection circuit by making a binary decision whether the temperature of a semiconductor exceeds a predetermined level based on the direction of differential current between first and second currents generated from first and second constant current sources having different temperature characteristics.
CONSTITUTION: First and second constant current sources 1, 2 having different temperature characteristics (positive and negative) are connected in series and generate constant currents I1, I2, respectively, upon application of a constant reference voltage Vref onto the series circuit. A voltage detection circuit 3 makes a binary decision whether the voltage V1 at the node between the first and second constant current sources 1, 2 exceeds a predetermined threshold level and notifies the decision results by turning a transistor Q1 ON/OFF. Consequently, the direction of differential current between the first and second currents I1, I2 varies at a constant temperature regardless of fluctuation of the process. With such arrangement, accuracy and reproducibility can be enhanced for the temperature detection circuit making a binary decision whether the temperature of a semiconductor exceeds a predetermined level.
Inventors:
Makoto Chiba
Ryohei Saga
Ryohei Saga
Application Number:
JP9288495A
Publication Date:
February 16, 2004
Filing Date:
April 18, 1995
Export Citation:
Assignee:
Renesas Technology Corp.
Renesas Electronics East Japan Semiconductor Co., Ltd.
Renesas Electronics East Japan Semiconductor Co., Ltd.
International Classes:
H02H5/04; H02H7/20; (IPC1-7): H02H5/04; H02H7/20
Domestic Patent References:
| JP774550A |
Attorney, Agent or Firm:
Tomio Ohinata