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Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JP3762856
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To allow acceleration of an operating speed and low power consumption of a CMOS circuit to be compatible.
SOLUTION: Control circuits FRQCNT, VDDCNT and VBBCNT generate an optimum clock signal, power supply voltage and substrate bias in response to an instruction signal CMD of an instruction generator OP, and supplies the signals to a main circuit LSI. Thus, unevenness of CMOS circuit characteristics is suppressed to improve the performance of the circuit. Reduction in power is realized without deteriorating the operating speed of the CMOS circuit or acceleration is realized without increasing the power consumption in the CMOS circuit.


Inventors:
宮▲崎▼ 祐行
Koichiro Ishibashi
Application Number:
JP2000164717A
Publication Date:
April 05, 2006
Filing Date:
May 30, 2000
Export Citation:
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Assignee:
Renesas Technology Corp.
International Classes:
H01L27/04; H03K19/094; G11C11/407; H01L21/822; H01L21/8234; H01L27/088; H03K19/00; H03K19/003; H03K19/0948; H03K19/096; (IPC1-7): H03K19/094; G11C11/407; H01L27/04; H01L21/822; H03K19/0948
Domestic Patent References:
JP10187270A
JP10242840A
JP11122047A
JP9008645A
JP8017183A
JP6291267A
JP6237164A
JP2001156261A
Foreign References:
WO1999010796A1
Attorney, Agent or Firm:
Shizuyo Tamamura
Yasuo Sakuta