PURPOSE: To attain high circuit integration and to quicken the operation by allowing a CMOS dynamic semiconductor integrated circuit to prevent malfunction due to a leak current and malfunction in the cascode connection even without an inverter.

CONSTITUTION: The circuit is provided with MOS transistors(TRs) 2, 3 whose gates and drains are in cross connection for an output latch and with MOS TRs 4, 5 for output precharge. Since the MOS TR 1 is turned off, the MOS TRs 4, 5 are turned on when a clock signal CLK is at a low level, outputs Q, inverse of Q are precharged to a high level. When the clock signal CLK changes to a high level, the MOS TR 1 is turned on and the MOS TRs 4, 5 are turned off. In this case, one of MOS TR groups makes the output and a GND potential conductive to set an output potential to a low level depending on the state of input signals IN and inverse of IN.