Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
Japanese Patent JPH01196887
Kind Code:
A
Abstract:
PURPOSE:To obtain a mesa striped type laser, deterioration on the side face of an active layer of which is inhibited, by forming double hetero-junction structure to a striped shape and making the width of the active layer wider than that of clad layers on both sides of the active layer. CONSTITUTION:An N-AlyGa1-yAs clad layer 2, a non-doped AlxGa1-xAs active layer 3, a P-AlyGa1-yAs clad layer 4 and a P-GaAs contact layer 5 are grown continuously onto an N-GaAs substrate 1. Multilayer crystals are etched to a striped shape by a sulfuric acid group etchant. The width of the active layer 3 is formed in size wider than that of the clad layers 2, 4 on both sides of the active layer 3. Si3N4 6 is attached to etched sections, and a P side ohmic electrode metal is evaporated. Accordingly, a mesa striped type laser, deterioration on the side face of the active layer 3 of which is inhibited, is acquired.
Inventors:
SUGINO TAKASHI
YOSHIKAWA AKIO
HIROSE MASANORI
KUME MASAHIRO
YAMAMOTO ATSUYA
NAKAMURA AKIRA
YOSHIKAWA AKIO
HIROSE MASANORI
KUME MASAHIRO
YAMAMOTO ATSUYA
NAKAMURA AKIRA
Application Number:
JP2308588A
Publication Date:
August 08, 1989
Filing Date:
February 02, 1988
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01S5/00; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Toshio Nakao (1 outside)