To suppress diffusion of carriers to an active layer by obtaining a carrier diffusion suppressing layer of the carrier concentration lower than that of a third clad layer.

First, on an n-type substrate 1, an n-type first clad layer 3, an active layer 4, a low concentration p-type second clad layer 5, a p-type etching stopping layer 6, a (low concentration) p-type AlGaInP layer 7, a (high concentration p-type) AlGaInP layer 8 and a p-type GaAs contact layer 12 are grown in this order. Then a ridge structure 10 is formed on the surface of the p-type GaAs layer 12. Then an n-type current stopping layer 11 is bury- grown, and the p-type contact layer 12 is formed. After this, an n-type electrode 13 is formed on the rear surface of the substrate 1, and a p-type electrode 14 is formed on the front surface of the contact layer 12, to obtain a semiconductor laser device. At this time, because a carrier diffusion suppressing layer 7 is provided between the high concentration p-type third clad layer 8 and the low concentration p-type second clad layer 5, diffusion of carriers to the active layer 4 is suppressed, and life properties of the laser is improved.