To provide a semiconductor laser diode and a manufacturing method of the same, which can inhibit crystal cracks in cleavage time.
A semiconductor laser diode of an embodiment comprises: a substrate 14; an active layer 26 formed above the substrate 14; a semiconductor layer 28 formed on the active layer 26; a front-end-face high-resistance part 28a formed by cutting a part of interstitial bond in the semiconductor layer 28 at a portion including a front end face 12a and having higher resistance than that of a portion where the interstitial bond is not cut; a rear-end-face high-resistance part 28b formed by cutting a part of interstitial bond in the semiconductor layer 28 at a portion including a rear end face 12b and having higher resistance than that of a portion where the interstitial bond is not cut; and an electrode 38 formed on the semiconductor layer 28 so as to have a portion that does not directly contact the front-end-face high-resistance part 28a in the front end surface 12a, and have a portion that does not directly contact the rear-end-face high-resistance part 28b in the rear end surface 12b.
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Hideki Takahashi
Yoshimi Kuno