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Title:
SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013102043
Kind Code:
A
Abstract:

To provide a semiconductor laser element capable of being driven at a comparatively low threshold voltage while inhibiting reduction in an optical output; and provide a manufacturing method of the semiconductor laser element.

An edge emitting semiconductor laser element 11 comprises: an active layer 3 provided above a principal surface 1a of a support substrate 1 composed of a hexagonal semiconductor; a p-type nitride semiconductor region 4 provided on the active layer 3: and an ITO electrode 5a provided on the p-type nitride semiconductor region 4. A p-side clad layer 4c of the p-type nitride semiconductor region 4 has a film thickness in a range from not less than 0.18 μm to not more than 0.22 μm. The ITO electrode 5a has an optical absorption coefficient of not less than 2.5×103 cm-1 and not more than 3.0×103 cm-1 with respect to light having an oscillation wavelength of the active layer 3.


Inventors:
KUMANO TETSUYA
Application Number:
JP2011244617A
Publication Date:
May 23, 2013
Filing Date:
November 08, 2011
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01S5/042; H01S5/343
Domestic Patent References:
JP2011222973A2011-11-04
JP2004289157A2004-10-14
JP2001267686A2001-09-28
JPH11233893A1999-08-27
JPH10135575A1998-05-22
JP2011023541A2011-02-03
Foreign References:
WO2005021436A12005-03-10
WO2011040487A12011-04-07
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Ichira Kondo



 
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