To provide a semiconductor laser which has excellent heat dissipation performance and can reduce parasitic capacitance.
The semiconductor laser includes a buffer layer 7 of a first conductivity type, an active layer 9 formed on the buffer layer 7, a semiconductor region 12 of a second conductivity type including a ridge 19 having an upper surface and a pair of side surfaces 19a, 19b and a spacer layer 13 formed on a principal surface 9a of the active layer 9, an insulator layer 17 formed on the side surface 19a of the ridge 19 and having a first portion 17a, an upper electrode 21 provided on the upper surface 19c of the ridge 19 and electrically connected to the ridge 19, and a metal layer 23 spaced apart from the upper electrode 21 and formed on the first portion 17a of the insulator layer 17 wherein the upper surface 19c of the ridge 19 and the pair of side surfaces 19a, 19b of the ridge 19 extend along an (x) axis, the spacer layer 13 has a first region 13a, a second region 13b, and a third region 13c disposed in order along the principal surface 9a of the active layer 9, and the ridge 19 is formed on the second region 13b.
| JP2005209717A | 2005-08-04 | |||
| JP2007173392A | 2007-07-05 | |||
| JP2007103481A | 2007-04-19 | |||
| JP2000114671A | 2000-04-21 | |||
| JP2005209717A | 2005-08-04 | |||
| JP2007173392A | 2007-07-05 |
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo