To eliminate the ununiformity of the drive voltage of a light emitting diode which is to be caused by ununiformity of the thickness of a layer connecting an electrode.

In a semiconductor light-emitting device, a first conductivity type semiconductor layer 3 and a reverse conductivity type semiconductor layer 4 which are composed of compound semiconductor are laminated on a substrate 1, a common electrode 6 is connected with and arranged on the first conductivity-type semiconductor layer, and an individual electrode 5 is connected with and arranged on the second conductivity-type semiconductor layer 4. A silicon layer 2 containing first conductivity-type semiconductor impurities with high concentration is arranged between the substrate 1 and the first conductivity type semiconductor layer 3, and the common electrode 6 is connected with and arranged on the silicon layer.