To prevent the generation of the uneveness in color of a semiconductor device.

This semiconductor light-emitting device is provided with substrates 3 and 4, a semiconductor light-emitting element 2 fixed to a recess 3a formed at the substrates 3 and 4, coating materials 10 to be filled in the recess 3a so that the semiconductor light-emitting element 2 can be coated, and a covering body 8 for covering the coating material 10. In this case, a translucent laminate 12, which includes fluorescent substances for converting the lights irradiated from the semiconductor light-emitting element 2 into the other emission wavelengths is fixed to the upper face or lower face of the semiconductor light-emitting element 2, and light-diffusing agent 16 for diffusing the lights irradiated from the semiconductor light-emitting element 2 is mixed with the coating materials 10. Thus, as a result light emission whose directivity is high can be obtained without color uneveness, and generation of cracks is suppressed.