SEMICONDUCTOR LIGHT-EMITTING DEVICE

Japanese Patent JP3464853

B2

PROBLEM TO BE SOLVED: To make it possible to prevent the deterioration of a semiconductor light-emitting device due to a crystal defect by a method wherein at least one interface, which comes into contact with the luminous layer, is provided with a conductive oxide layer, which can inject carriers into the light emitting layer and confine or extract light.
SOLUTION: A buffer layer 12, a clad layer 13, an active layer 14 and an optical waveguide layer 5 are formed in order on a substrate 11. An insulating film 16 having a small window and an electrode layer 17, which is also used in combination as an ITO clad layer, are formed in order on the layer 15. Here, the layers 14 and 15 correspond to the first formed luminous layer. In such a way, a semiconductor light-emitting device is provided with the layer 17, which is also used in combination as the ITO clad layer, in an interface which comes into contact with the layer 15, so that the layer 17 a injects carriers into the layer 15 via a tunnel current to extract a good generated light as the layer 15 is transparent to blue light. Thereby, the tunnel current easily flows and heat is hardly generated in the junction surface.

Masaaki Onomura
Yukie Nishikawa
Genichi Hatagoshi

JP22904595A

November 10, 2003

September 06, 1995

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Toshiba Corporation

H01L33/06; H01L33/12; H01L33/14; H01L33/28; H01L33/32; H01L33/42; H01L33/44; H01S5/00; H01S5/323; H01S5/343; (IPC1-7): H01S5/323; H01L33/00

JP5190900A
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JP468579A
JP4199752A
JP2283744A
JP794784A
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JP638265U

Takehiko Suzue

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