Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2009117641
Kind Code:
A
Abstract:
To provide a semiconductor light-emitting element capable of emitting polarization with a high polarization ratio.
The semiconductor light-emitting element includes a light-emitting part 3 having an active layer 12 composed of a group III-nitride semiconductor where a nonpolar surface or a semipolar surface is defined as a growth main surface, and generating the polarization from the active layer 12; and slits 40 arranged in a light extraction surface 3a for extracting the polarization and being lines-and-spaces narrower than the wavelength of the polarization.
Inventors:
TSUJIMURA HIRONORI
Application Number:
JP2007289622A
Publication Date:
May 28, 2009
Filing Date:
November 07, 2007
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L33/06; H01L33/32; H01L33/38
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito
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