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Title:
SEMICONDUCTOR MEMORY DEVICE AND METHOD
Document Type and Number:
Japanese Patent JP2023091180
Kind Code:
A
Abstract:
To suppress decrease in area efficiency.SOLUTION: The semiconductor memory device includes: a regular cell array containing a plurality of regular cells each being a non-volatile memory cell: and a plurality of dummy cells each of which is a non-volatile memory cell and which is arranged in at least a part of the peripheral region of the regular cell array. Information about the semiconductor memory device is written to at least some of the plurality of dummy cells.SELECTED DRAWING: Figure 1

Inventors:
SHIMADA MANABU
TAMURA ATSUSHI
Application Number:
JP2021205789A
Publication Date:
June 30, 2023
Filing Date:
December 20, 2021
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
G01R31/28; G11C29/00
Attorney, Agent or Firm:
Sakai International Patent Office