SEMICONDUCTOR STORAGE DEVICE - TOSHIBA MEMORY CORP

Title:

SEMICONDUCTOR STORAGE DEVICE

Document Type and Number:

Japanese Patent JP2017168708

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor storage device with higher storage density.SOLUTION: A semiconductor storage device includes a semiconductor layer, a first electrode, a first oxide layer, a second oxide layer, and a storage layer. The first oxide layer is provided between the semiconductor layer and the first electrode. The second oxide layer is provided between the first oxide layer and the first electrode. The storage layer is provided between the first oxide layer and the second oxide layer. The storage layer includes a first region containing silicon nitride, a second region provided between the first region and the second oxide layer and containing silicon nitride, and a third region provided between the first region and the second region. The third region contains a plurality of first metal atoms. The first density of the coupling between the first metal atoms in the third region is lower than the second density of the coupling between the first metal atom and the nitrogen atom in the third region.SELECTED DRAWING: Figure 1

Inventors:

MATSUSHITA DAISUKE
NAKASAKI YASUSHI
INO TSUNEHIRO

Application Number:

JP2016053418A

Publication Date:

September 21, 2017

Filing Date:

March 17, 2016

Export Citation:

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Assignee:

TOSHIBA MEMORY CORP

International Classes:

H01L29/788; H01L21/336; H01L27/115; H01L29/792

Attorney, Agent or Firm:

Masahiko Hinataji

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