Title:
Semiconductor memory device
Document Type and Number:
Japanese Patent JP6253824
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing deterioration in performance characteristics while disposing a nonvolatile semiconductor element and the like in conformity to a substrate.SOLUTION: A semiconductor storage device comprises: a first nonvolatile semiconductor memory 10; a second nonvolatile semiconductor memory 10; a resistive element 12; a controller 4; first signal lines 21 and 22 connecting the controller 4 and the resistive element 12; second signal lines 23 and 24 connecting the resistive element 12 and the first nonvolatile semiconductor memory 10; a third signal line being branched off from the second signal lines 23 and 24 and connected to the second nonvolatile semiconductor memory 10; and a substrate 8. The first nonvolatile semiconductor memory 10 and the second nonvolatile semiconductor memory 10 are disposed symmetrically with respect to the substrate 8. At least one of the second and third signal lines 23 and 24 includes a signal line formed in a first wiring layer of internal wiring layers and a signal line formed in a second wiring layer of the internal wiring layers different from the first wiring layer.SELECTED DRAWING: Figure 9
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Inventors:
Masato Sugita
Naoki Kimura
Kimura Daisuke
Naoki Kimura
Kimura Daisuke
Application Number:
JP2017037965A
Publication Date:
December 27, 2017
Filing Date:
March 01, 2017
Export Citation:
Assignee:
Toshiba Memory Corporation
International Classes:
G11C5/02; G06F12/06; G11C5/04; H01L25/065; H01L25/07; H01L25/18
Domestic Patent References:
| JP11204726A | ||||
| JP2008135597A | ||||
| JP2006237385A |
Attorney, Agent or Firm:
Sakai International Patent Office
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