SEMICONDUCTOR MEMORY AND ITS DRIVING METHOD

Japanese Patent JP3805659

B2

PROBLEM TO BE SOLVED: To read data stored in a ferroelectric capacitor even if a potential difference applied to the ferroelectric capacitor is lost by injection of electrons or positive holes.
SOLUTION: A field effect type transistor is constituted of a source region 101, a drain region 102, a channel region 103, a gate insulation film 104, and a floating gate electrode 105, a ferroelectric capacitor 113 is provided on the field effect type transistor through a insulation film. The ferroelectric capacitor 113 comprises a ferroelectric film 110, an upper side first electrode 111 and a lower side second electrode 112. For example, a direction of polarization of the ferroelectric film 110 is downward look and a first state in which the ferroelectric film 110 has an almost saturated polarization value is written as data '1', while a direction of polarization of the ferroelectric film 110 is downward look and a second state in which the ferroelectric film 110 has an almost zero polarization value is written as data '0'.

JP2002025246	SEMICONDUCTOR STORAGE DEVICE
JP3917299	FERROELECTRIC SUBSTANCE MEMORY DEVICE AND ITS DATA PROTECTION METHOD
WO/2021/113072	RESET VERIFICATION IN A MEMORY SYSTEM

Yasuhiro Shimada
Takehisa Kato
Takayoshi Yamada

JP2001325817A

August 02, 2006

October 24, 2001

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Matsushita Electric Industrial Co., Ltd

G11C11/22; H01L21/8246; H01L21/8247; H01L27/105; H01L29/788; H01L29/792; (IPC1-7): G11C11/22; H01L21/8247; H01L27/105; H01L29/788; H01L29/792

JP8124378A
JP11045584A
JP5041080A
JP2000137988A
JP2000251478A

Hiroshi Maeda
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura

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