Title:
SEMICONDUCTOR MEMORY AND ITS TEST METHOD
Document Type and Number:
Japanese Patent JP2003059299
Kind Code:
A
Abstract:
To provide a small scale potential measuring method which can easily measure a potential of a word line.
A dummy cell of which a threshold value is made fixed is arranged on a digit line which can be selected by a Y decoder in the same way as a normal cell, a dummy cell having the same constitution as a normal cell and of which a threshold value is fixed is arranged for constitution of a memory cell group arranged at intersection parts of a plurality of word lines and bit lines, a digit line on which dummy cells are arranged in the same way as a normal cell is selected by the Y decoder, and data is outputted through a sense amplifier.
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Inventors:
FUJITA MITSUHIRO
Application Number:
JP2001250447A
Publication Date:
February 28, 2003
Filing Date:
August 21, 2001
Export Citation:
Assignee:
NEC MICROSYSTEMS LTD
International Classes:
G11C16/02; G11C16/06; G11C29/00; G11C29/24; G11C29/34; (IPC1-7): G11C29/00; G11C16/02; G11C16/06
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)