Title:
SEMICONDUCTOR OPTICAL ELEMENT
Document Type and Number:
Japanese Patent JP2015179749
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a monolith-integrated semiconductor optical element formed of a group IV semiconductor capable of causing a light-emitting element to emit light at high efficiency and allowing a light receiving element to receive light at high efficiency.SOLUTION: The semiconductor optical element is formed of single crystal silicon subjected to doping, which includes an electrode; a light-emitting layer; and a light-receiving layer formed on an insulator film. A thin-line waveguide is formed between the light-emitting layer and the light-receiving layer. A stressor formed of silicon nitride having a compression strain is formed to cover the light-receiving layer. A stressor formed of silicon nitride having an extension distortion is formed to cover the light-emitting layer. The band gap/energy of the light-receiving layer is set to be smaller than the band gap/energy of the light-emitting layer.
More Like This:
| JP2003158297 | NITRIDE SEMICONDUCTOR DEVICE WITH REDUCED POLARIZED ELECTRIC FIELD |
| JPH08139360 | SEMICONDUCTOR HETERO-JUNCTION MATERIAL |
| WO/2000/049694 | SEMICONDUCTOR LASER |
Inventors:
TANI KAZUKI
Application Number:
JP2014056735A
Publication Date:
October 08, 2015
Filing Date:
March 19, 2014
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01S5/32; H01L31/10; H01S5/026
Domestic Patent References:
| JP2008091572A | 2008-04-17 | |||
| JP2005530360A | 2005-10-06 | |||
| JPH0645688A | 1994-02-18 | |||
| JP2013207231A | 2013-10-07 | |||
| JPH11163388A | 1999-06-18 | |||
| JP2003283039A | 2003-10-03 | |||
| JP2001244562A | 2001-09-07 | |||
| JP2009514231A | 2009-04-02 |
Foreign References:
| WO2010055750A1 | 2010-05-20 | |||
| US20110221019A1 | 2011-09-15 | |||
| WO2013118327A1 | 2013-08-15 | |||
| WO2013111173A1 | 2013-08-01 | |||
| US20130039664A1 | 2013-02-14 |
Attorney, Agent or Firm:
Aoritsu patent business corporation