Title:
MANUFACTURING METHOD OF SEMICONDUCTOR OPTICAL ELEMENT AND SEMICONDUCTOR OPTICAL ELEMENT
Document Type and Number:
Japanese Patent JP2015179748
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a monolith-integrated semiconductor optical element formed of a group IV semiconductor capable of causing a light-emitting element to emit light at high efficiency and allowing a light receiving element to receive light at high efficiency.SOLUTION: An n-type diffusion electrode and a p-type diffusion electrode are formed by performing doping after laminating an insulator film and a single crystal silicon formed over the insulator film. After forming a light-emitting layer with single crystal silicon so as to be conductive on both electrodes, a hard mask is deposited above the light-emitting layer and an ion implant layer is formed adjacent thereto. Subsequently, P ion (group IV element) is impregnated into the ion implant layer. After that, the ion implant layer is subjected to an annealing treatment to disperse the impregnated impurity in the light-emitting layer. Finally, a hard mask and the ion implant layer are removed by etching.
Inventors:
TANI KAZUKI
Application Number:
JP2014056734A
Publication Date:
October 08, 2015
Filing Date:
March 19, 2014
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01S5/32; H01L31/10; H01S5/026
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Foreign References:
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Other References:
JIFENG LIU ET AL.: "Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si", OPTICS EXPRESS, vol. 15, no. 18, JPN7011003078, 3 September 2007 (2007-09-03), pages 11272 - 11277, ISSN: 0003650870
Attorney, Agent or Firm:
Aoritsu patent business corporation