To provide an inductive coupled plasma processing apparatus which can generate a homogeneous, stable and high-density plasma.

A semiconductor plasma processing apparatus for processing an object with use of plasma includes a reaction chamber which is vacuumized to process the object therein, an antenna 6 provided within the chamber and made of a plurality of linear conductors 21, and a RF high frequency power supply connected to one ends of the conductors. The antenna 6 includes at least three linear conductors positioned radially from a center 20 of the antenna as equally spaced from each other. The conductors 21 are grounded at their one ends and are connected at the other ends to the RF high frequency power supply. The surfaces of the linear conductors in the antenna are insulation- treated. The plasma processing apparatus includes an electromagnet for generating a magnetic field in a direction perpendicular to an induced electric field.