Title:
SEMICONDUCTOR PORCELAIN WITH NEGATIVE RESISTANCE TEMPERATURE CHARACTERISTICS
Document Type and Number:
Japanese Patent JP3245953
Kind Code:
B2
Abstract:
PURPOSE: To obtain a semiconductor porcelain having the B-constant at the temperature higher than phase-transition point is larger than the B-constant at the temperature lower than a phase-transition point, also having excellent temperature stability at low temperature and negative resistance temperature characteristics of large resistance lowering ratio at high temperature.
CONSTITUTION: The (x) and (n) of a semiconductor porcelain shown in the formula (Ba1-xcax)mTiO3 should be within the range of 0.05≤x≤0.400 and 99≤m≤1.05 respectively.
Inventors:
Terunobu Ishikawa
Arita Yoko
Hideaki Niimi
Yasunobu Yoneda
Arita Yoko
Hideaki Niimi
Yasunobu Yoneda
Application Number:
JP12960192A
Publication Date:
January 15, 2002
Filing Date:
April 22, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
H01C7/04; (IPC1-7): H01C7/04
Domestic Patent References:
| JP4733294A | ||||
| JP5764902A | ||||
| JP5444797A |
Attorney, Agent or Firm:
Hitoshi Nishizawa
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