Title:
SEMICONDUCTOR POSITION DETECTOR
Document Type and Number:
Japanese Patent JPS5778182
Kind Code:
A
Abstract:
PURPOSE:To obtain a resistance layer having no crystal defect, and uniform resistivity and film thickness by forming the resistance layer for dividing generated charge on a semiconductor substrate to form a semiconductor position detector for detecting an incident position of charged particles or the like, and using thereat an epitaxially grown layer as the resistance layer. CONSTITUTION:A rectifying junction surface 2 is formed on one surface of a rectangular silicon semiconductor substrate 1, a similar silicon epitaxial crystalline grown layer 3a to the substrate 1 is grown on the other surface, and position pickup electrodes B1 and B2 are mounted at both ends thereof. When a semiconductor position detector is thus constructed and radiation is not incident thereto, the charge generated in the depletion layer of the detector reaches the layer 3a, is divided and is diffused to be collected to the electrodes B1 and B2, and can be produced as position detection signal P. Similarly, an energy E can be produced from a bias electrode A provided at the end of the junction surface 2. In this manner the position resolution can be improved and high linearity can be obtained with high reliability, in the detector with high accuracy.
Inventors:
FUSHIMI KAZUO
KIN CHISHIYU
KIN CHISHIYU
Application Number:
JP15413780A
Publication Date:
May 15, 1982
Filing Date:
October 31, 1980
Export Citation:
Assignee:
FUSHIMI KAZUO
KIN CHISHIYU
KIN CHISHIYU
International Classes:
G01D5/34; G01D5/26; H01L31/115; H01L31/16; (IPC1-7): G01D5/34; H01L31/00