PURPOSE: To eliminate the influence by a metal wiring and improve detecting precision by designing the form and direction of the metal wiring.

CONSTITUTION: Four diffusion leads 20 are formed substantially at equal intervals in the circumferential direction on the outside of a diaphragm 2 on the surface of a semiconductor substrate 1 to mutually connect adjacent radial differential pressure detecting gauges 3A and circumferential differential pressure detecting gauges 3B. One-side ends of metal wirings 21 formed by evaporation of aluminum are connected to the diffused leads 20, respectively. The diffused leads 20 are formed in U-shape so that lead bodies 20a cross the diffusion resistance layers 3a of the differential pressure detecting gauges 3A, 3B substantially at 45°, and connected to the diffusion resistance layers 3a of the adjacent sensors 3A, 3B. The metal wirings 21 are formed in the diagonal directions of the semiconductor substrate 1 in such a manner as to have substantially the equal distance from the diffusion resistance layers 3a, 3a of the adjacent differential pressure detecting gauges 3A, 3B, and one-side ends are connected to the centers of the lead bodies 20a of the diffusion leads 20.