Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH03233334
Kind Code:
A
Abstract:
PURPOSE:To miniaturize a sensor and to reduce thermal distortion by forming the first plane of an insulating substrate on which a through area is formed so as to cover the through area, joining a second substrate of type different from the insulating substrate, and mounting a sensor chip on the second substrate passing the trough area from the second plane of the insulating substrate. CONSTITUTION:The second substrate 2 of type different from the substrate 1 which covers the through area 1a and forms a pressure introduction hole 2a is joined with the first plane 1b of the insulation substrate 1. The sensor chip 4 is stuck on a chip mounting part 2b passing the area 1a from a plane 1c with a mounting agent 9. The chip 4 is connected to the circuit of the substrate 1 with a bonding wire 5. A chip cover 7 on which an air releasing hole 7a is formed is joined with the plane 1c with an adhesive 3, and a port cover 8 on which a pressure introduction port 8a is formed is joined with a confronting plane 2c with the adhesive 3. In such a way, height difference between the substrate 1 and the chip 4 can be eliminated, which reduces the length of the wire 5, and also, since the material of the substrate 2 can be selected as the one almost equivalent to that of the chip 4, the thermal distortion due to thermal expansion difference can be reduced.
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Inventors:
SUDA MASAHIRO
Application Number:
JP3013990A
Publication Date:
October 17, 1991
Filing Date:
February 08, 1990
Export Citation:
Assignee:
NEC CORP
International Classes:
G01L9/04; G01L9/00; G01P1/00; G01P15/08; H01L29/84; (IPC1-7): G01L9/04; H01L29/84
Attorney, Agent or Firm:
Uchihara Shin
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