Title:
SEMICONDUCTOR PROCESSING APPARATUS AND METHOD FOR CURING MATERIAL WITH UV LIGHT
Document Type and Number:
Japanese Patent JP2009094503
Kind Code:
A
Abstract:
To improve the efficiency of UV curing and to improve the film characteristics of a cured low dielectric constant film.
The method for curing low dielectric constant materials in a process chamber during semiconductor processing is given. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has an oxygen concentration of about 25-10,000 ppm during the irradiation of the UV light. The oxygen limits the formation of -Si-H and -Si-OH groups in the low dielectric constant material, thereby reducing the occurrence of moisture absorption and oxidation in the low dielectric constant material.
Inventors:
MATSUSHITA KIYOHIRO
KAGAMI KENICHI
KAGAMI KENICHI
Application Number:
JP2008242527A
Publication Date:
April 30, 2009
Filing Date:
September 22, 2008
Export Citation:
Assignee:
ASM JAPAN KK
International Classes:
H01L21/316; H01L21/31; H01L21/768; H01L23/522
Domestic Patent References:
| JP2005268532A | 2005-09-29 | |||
| JP2008103586A | 2008-05-01 |
Attorney, Agent or Firm:
Akira Hori
Hiroki Kojima
Katsumi Inoue
Hiroki Kojima
Katsumi Inoue