Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022142627
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of suppressing a reset current.SOLUTION: A semiconductor storage device according to an embodiment includes an electrode made of a first material, further includes a memory material made of a second material capable of switching the resistivity of a high resistance state and the resistivity of a low resistance state by heating due to electric current, and has a structure in which the electrode and the memory material are laminated in a thin film form. Sidewalls made of a material having a lower thermal conductivity than the memory material are provided on sides of the thin film of the memory material. The first material has an amorphous structure with no diffraction peak confirmed by electron beam diffraction. The thermal conductivity is two orders of magnitude lower than that of single-phase metals, the resistivity is 50 mΩ cm or less, and the semiconductor storage device has positive temperature dependence.SELECTED DRAWING: Figure 1
Inventors:
HOSHINO TAKESHI
Application Number:
JP2021042876A
Publication Date:
September 30, 2022
Filing Date:
March 16, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Patent Attorney Shiga International Patent Office
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