To provide a storage device wherein performance of a transistor is not damaged, with a simple structure.

In this semiconductor device, a drain electrode of a transistor of rised drain structure which is formed on an Si substrate and a lower part electrode 17 of a capacitor wherein a ferroelectric thin film 18 is made a storage part are connected in series. An IrO2/Ir laminated film having property which prevents diffusion of elements constituting the ferroelectric thin film 18 is used as the lower part electrode 17 of the capacitor. Since the transistor has the rised drain structure, elements of dielectrics are hardly diffused in the substrate when the transistor is directly connected with the capasitor. Especially, by using the IrO2/Ir laminated film as the lower part electrode of the capacitor, elements of the dielectrics can be definitely restricted from diffusing into the substrate.