PURPOSE: To obtain a semiconductor storage device with high operating stability in addition to rapid operation by connecting plural load elements in a sense amplifier to different positions of the same data output line to constitute selective functions.

CONSTITUTION: The sense amplifier A is provided with plural load elements and a selected memory cell M selects the sense amplifier loads T9, T10 which are the nearest to the memory cell M itself so as to be driven. Namely, the voltage levels of data output buses S, S' are determined by the ratio of current driving capacity between input transistors (TRs) T1, T2 and load TRs T9, T10 in the sense amplifier A, the fluctuation of the voltage levels on the data output buses S, S' can be suppressed as less as possible by combining and operating respective adjacent elements even of the characteristics of respective elements are fluctuated by various factors. Even if the constants of the circuit are set up mainly based on the rapid operation, high operation stability can be obtained.