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Title:
SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2009040664
Kind Code:
A
Abstract:

To provide a nonpolar substrate that can be made large in area, and to provide its manufacturing method.

The method for manufacturing a semiconductor substrate includes steps of: forming a semiconductor growth layer having alternately deposited GaN layers and AlXGa(1-X)N layers (wherein X satisfies 0X1) on a sapphire substrate; and dividing the semiconductor growth layer along a direction intersecting the growth plane of the semiconductor growth layer so as to form a semiconductor substrate 100 having a principal surface made of a nonpolar plane (cut face 100a) having a first region 11a consisting of the GaN layers and a second region 12a consisting of the AlXGa(1-X)N layers (wherein X satisfies 0X1) disposed in stripes.


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Inventors:
ISHITA KYOJI
INOUE DAIJIRO
HATA MASAYUKI
NOMURA YASUHIKO
KUNISATO TATSUYA
Application Number:
JP2007210458A
Publication Date:
February 26, 2009
Filing Date:
August 10, 2007
Export Citation:
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Assignee:
SANYO ELECTRIC CO
International Classes:
C30B29/38; C30B25/02; C30B33/00; H01S5/343
Domestic Patent References:
JP2002029897A2002-01-29
JP2007116152A2007-05-10
JP2005522889A2005-07-28
JPH10335750A1998-12-18
JP2006315947A2006-11-24
JP2003183100A2003-07-03
Attorney, Agent or Firm:
Hirokazu Miyazono



 
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